[P] Poster Session

[P-02] Change of electrical characteristics of a p-type MOSFET via hydrogen effect on boron redistribution

*Youngrok Kim¹, Chihak Ahn², Alexander Schmidt¹, Joohyun Jeon¹, Sae-Jin Kim¹, Hakseon Kim¹, Hyunjae Kim¹, Hyeyoung Kwon¹, Yero Lee¹, Sung Jin Kim¹, Dongjin Lee¹, Jaeduk Lee¹, Dae Sin Kim¹ (1. Samsung Electronics Co., Ltd., 2. Samsung Semiconductor Inc.)