[P] Poster Session

[P-04] First-Principles Study of Charged Point Defects in 4H-SiC: Accurate Formation Energies, Trap Levels, and Beyond

*Haruhide Miyagi¹, Ulrik G. Vej-Hansen², Brad A. Wells², Jan-Niclas Luy², Christoph Zechner³ (1. Nihon Synopsys G.K., 2. Synopsys Denmark, 3. Synopsys GmbH)