[A-2] New Materials and Platforms for Photonics

[A-2-03] Analysis of III-V MOS optical modulator with transparent doped graphene gate electrode

〇Tipat - Piyapatarakul¹, Hanzhi Tang¹, Kasidit Toprasertpong¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1. Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.A-2-03

We numerically study the modulation properties of InGaAsP metal-oxide-semiconductor (MOS) optical modulator with graphene gate electrode operating at a 1.55 um wavelength. Using p-type doped graphene as a transparent gate electrode, we can fully utilize the electron-induced refractive index change in an n-type InGaAsP waveguide, enabling the phase modulation efficiency of 0.79 Vcm and 0.22 dB optical loss for pi phase shift when the gate oxide thickness is 100 nm. The high electron mobility in InGaAsP also enables the modulation bandwidth of greater than 100 GHz.