[A-2] New Materials and Platforms for Photonics

[A-2-04] Controllability of Luminescence Wavelength from GeSn Wires Fabricated by Laser Zone Melting on Quartz Substrates

〇Takayoshi Shimura¹, Ryoga Yamaguchi¹, Naoto Tabuchi¹, Masato Kondo¹, Mizuki Kuniyoshi², Takuji Hosoi³, Takuma Kobayashi¹, Heiji Watanabe¹ (1. Osaka Univ. (Japan), 2. ULVAC-Osaka Univ. Joint Res. Lab. for Future Tech. (Japan), 3. Kwansei Gakuin Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.A-2-04

We examined the effects of laser scan speed and power on the Sn fraction and crystallinity of GeSn wires fabricated by laser zone melting on quartz substrates. The Sn fraction increased from 1 to 3.5% with the increase in the scan speed from 5 to 100 um/s, corresponding to luminescence wavelength from 1770 to 2070 nm. This result can be understood as the scan speed dependence of the non-equilibrium degree during crystal growth. The increase in laser power reduced the Sn fraction and caused blue shift of luminescence wavelength. We discuss these phenomena based on the growth kinetics of zone melting.