[A-2] New Materials and Platforms for Photonics

[A-2-05] Optical Properties of Innovative GeSe_1-xTe_x Phase-Change Material Thin Films for On-Chip Active Components, Non-Linear and Neuromorphic Applications

〇Anthony Albanese¹, Martina Tomelleri¹, Jean-Baptiste Dory¹, Christophe Licitra¹, Benoît Charbonnier¹, Jean-Baptiste Jager², Aurélien Coillet³, Benoît Cluzel³, Pierre Noé¹ (1. Univ. Grenoble-Alpes, CEA-LETI (France), 2. Univ. Grenoble-Alpes, CEA-IRIG (France), 3. Univ. Bourgogne, ICB, UMR 6303 CNRS (France))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.A-2-05

In this work, the linear and nonlinear optical properties of innovative GeSe(1−x)Te(x) thin films in amorphous state as well as after crystallization are studied. These alloys obtained by industrial magnetron co-sputtering of GeSe and GeTe targets belong to the GeSe-GeTe pseudo-binary line lying between the covalent GeSe compound and the “metavalently” bonded GeTe phase-change material. They are considered as very promising candidates for high temperature non-volatile resistive memory and photonic applications. In fact, they exhibit fast and reversible phase transformations between amorphous and crystalline states with unprecedented large contrast of electronic and optical properties, a very high thermal stability of the amorphous compared to other PCMs and a high transparency in the NIR-MIR range in both states. By modifying the Te content of the thin films, one can tailor their linear and non-linear optical properties for a wide range of innovative optical and photonic applications.