[A-9] Imaging Sensors and Detectors

[A-9-07] Fabrication of 3 µm Pixel Pitch InGaAs Photodiodes using Be Implantation Doping for SWIR sensing

〇Jules Tillement^1,2,3, Cyril Cervera², Jacques Baylet², Olivier Gravrand², Quentin Lalauze², Christophe Jany², Thomas Di Rito², Olivier Saxod², Norbert Moussy², Thierry Baron³, Francois Roy¹, Frederic Boeuf¹ (1. STMicroelectronics (France), 2. Universite Grenoble Alpes, CEA Leti (France), 3. Universite Grenoble Alpes CNRS, LTM (France))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.A-9-07

In this work, we present a process of InGaAs photodiode manufacturing with Be implantation as the p-type doping method. We show successful realization of photodiodes arrays by spectral response for pixel pitch ranging from 15µm to 3µm, which is the lowest published pixel pitch to date for InGaAs photodetectors. The measured dark current density for our best case presented here is 10-6 A.cm-2 at -0.2V at 300K. Be profile and defects density after activation anneal are discussed as potential leads for further optimization.