Morphology and Properties of Diamond Deposited on Grooved 4H-SiC Substrate

Kuan Yew Cheong

doi:https://doi.org/10.7567/SSDM.2022.B-2-02

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[B-2] Wide Bandgap Materials

2022年9月27日(火) 14:00 〜 15:45 102 (1F)

Session Chair: Shingo Ogawa (Toray Res. Center, Inc.), Takuya Hoshi (NTT Device Technology Lab.)

14:30 〜 15:00

[B-2-02 (Invited)] Morphology and Properties of Diamond Deposited on Grooved 4H-SiC Substrate

〇Kuan Yew Cheong¹, Xiufei Hu², Ming Li², Yingnan Wang², Yan Peng², Gongbin Tang², Mingsheng Xu², Xiangang Xu², Jisheng Han², Xiwei Wang², Bin Li², Yiqiu Yang² (1. Universiti Sains Malaysia (Malaysia), 2. Shandong Univ. (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.B-2-02

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講演情報

[B-2] Wide Bandgap Materials

[B-2-02 (Invited)] Morphology and Properties of Diamond Deposited on Grooved 4H-SiC Substrate

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