2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

07: Organic / Molecular / Bio-electronics

[D-2] Biosensor, Chips and Microfluidic Devices for Cell Functions

2022年9月27日(火) 14:00 〜 15:45 104 (1F)

Session Chair: Ryugo Tero (Toyohashi Univ. of Tech.), Huang-Ming Chen (NYCU)

14:30 〜 14:45

[D-2-02] High-Sensitivity Extended Gate Field-Effect Transistor-Type Dopamine Sensor Based on Resistance-Coupling Effect

〇Tae-Hwan Hyun1, Won-Ju Cho1 (1. Kwangwoon Univ. (Korea))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.D-2-02

In this study, we propose an extended gate field-effect transistor (EGFET) based high-sensitivity dopamine (DA) sensor using resistive coupling effect to effectively amplify electrical signals. The constructed dopamine sensor has a structure in which an individual transducer unit and a sensing unit are electrically connected. The SnO2 sensing membrane of EG had a low dopamine sensitivity of 10.14 mV/log [DA], but the resistance coupling effect greatly amplified the sensitivity of dopamine up to 8.67 times and 87.95 mV/log [DA]. In addition, it was con-firmed that the resistance-binding effect can linearly amplify dopamine sensitivity. Therefore, the proposed EGFET-based sensor is expected to be an effective method for fast and accurate detection of dopamine by utilizing the resistive coupling effect.

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