2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-1] Ferroelectric Memory Materials

2022年9月27日(火) 11:30 〜 12:30 201 (2F)

Session Chair: Halid Mulaosmanovic (GlobalFoundries), Norikatsu Takaura (Hitachi, Ltd.)

11:30 〜 11:45

[F-1-01] Fabrication of Thin Ferroelectric Hf0.5Zr0.5O2 Film by Millisecond Flash Lamp Annealing

Yasuo Nara1, Yuto Ota1, 〇Hideaki Tanimura2, Hikaru Kawarazaki2, Shin'ichi Kato2 (1. Univ. of Hyogo (Japan), 2. SCREEN Semiconductor Solutions Co., Ltd. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-1-01

A ferroelectric Hf0.5Zr0.5O2 (HZO) thin film was formed by a short-time heat treatment using flash lamp annealing. For 10nm thick HZO, remnant polarization of about 30 uC/cm2 was obtained with higher endurance than RTA treatment. Further improvement of endurance was confirmed for thinner (5nm) HZO film.

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