[F-1] Ferroelectric Memory Materials

[F-1-02] Formation of ferroelectric ZrO₂ film in ultra-thin region by sputtering method

〇Shigehisa Shibayama¹, Jotaro Nagano¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1. Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-1-02

We examined the formation of ultra-thin ferroelectric ZrO2 films on the TiN bottom electrode using a sputtering method in conjunction with post oxidation treatment. We found that high-temperature sputtering and post plasma oxidation at room temperature successfully forms ferroelectric ZrO2 films. Furthermore, we demonstrated the formation of ferroelectric ZrO2 in the ultra-thin region down to 6 nm. Finally, we discussed the possibility of further improvement of the ZrO2 ferroelectricity.