[F-1] Ferroelectric Memory Materials

[F-1-03] Conflicting Effect of Oxygen Vacancy in the Bulk and at the Interface on Endurance of Hf_0.5Zr_0.5O₂ Ferroelectric Thin Film

〇Danyang Chen¹, Tianning Cui¹, Shuman Zhong¹, Liying Wu¹, Jingquan Liu¹, Mengwei Si¹, Xiuyan Li¹ (1. Shanghai Jiao Tong Univ. (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-1-03

This paper discusses two sides to oxygen vacancy (Vo) in endurance of Hf0.5Zr0.5O2 ferroelectric films: 1) Vo in the bulk improves the endurance with a strong wake-up effect due to enhancing the formation of tetragonal phase, and 2) Vo at the interface degrades the endurance with easier breakdown. Cutting off the kinetic linkage between two kinds of Vo is a key to the endurance enhancement.