2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-1] Ferroelectric Memory Materials

2022年9月27日(火) 11:30 〜 12:30 201 (2F)

Session Chair: Halid Mulaosmanovic (GlobalFoundries), Norikatsu Takaura (Hitachi, Ltd.)

12:00 〜 12:15

[F-1-03] Conflicting Effect of Oxygen Vacancy in the Bulk and at the Interface on Endurance of Hf0.5Zr0.5O2 Ferroelectric Thin Film

〇Danyang Chen1, Tianning Cui1, Shuman Zhong1, Liying Wu1, Jingquan Liu1, Mengwei Si1, Xiuyan Li1 (1. Shanghai Jiao Tong Univ. (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-1-03

This paper discusses two sides to oxygen vacancy (Vo) in endurance of Hf0.5Zr0.5O2 ferroelectric films: 1) Vo in the bulk improves the endurance with a strong wake-up effect due to enhancing the formation of tetragonal phase, and 2) Vo at the interface degrades the endurance with easier breakdown. Cutting off the kinetic linkage between two kinds of Vo is a key to the endurance enhancement.

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