[F-3] Ferroelectric Devices

[F-3-05] Nanosecond Laser Annealing Based Wake-up of Ferroelectric HfZrO₂ Capacitors for BEOL Compatible and High Throughput FeRAM

〇Jia-Yang - Lee^1,2, Kuo-Yu Hsiang^1,3, Chun-Yu Liao¹, Zhao-Feng Lou¹, Chen-Ying Lin¹, Song-Lin Tang¹, Fu-Sheng Chang¹, Zhi-Xian Li¹, Wei-Chang Ray¹, Han-Chen Tseng¹, Chun-Chieh Wang¹, Ming-Han Liao⁴, Chee-Wee Liu², Min-Hung Lee¹ (1. Inst. and Undergraduate Program of Electro-Optical Eng. , National Taiwan Normal Univ. (Taiwan), 2. Graduate School of Advance Tech. , National Taiwan Univ. (Taiwan), 3. Inst. of Electronics, National Yang Ming Chiao Tung Univ. (Taiwan), 4. Department of mechanical engineering, National Taiwan Univ. (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-3-05

Novel wake-up procedure is proposed by nanosecond laser annealing (NLA), and the outstanding delta 2Pr and low temperature process (lower than 400oC for underneath layer) are demonstrated. The general wake-up by E-field cycling makes mass production difficult due to individual device step by step. The proposed method is feasible for BEOL compatible and high throughput FeRAM.