2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-3] Ferroelectric Devices

2022年9月27日(火) 16:15 〜 18:00 201 (2F)

Session Chair: Laurent Grenouillet (CEA-Leti), Hiroshi Naganuma (Tohoku Univ.)

17:30 〜 17:45

[F-3-05] Nanosecond Laser Annealing Based Wake-up of Ferroelectric HfZrO2 Capacitors for BEOL Compatible and High Throughput FeRAM

〇Jia-Yang - Lee1,2, Kuo-Yu Hsiang1,3, Chun-Yu Liao1, Zhao-Feng Lou1, Chen-Ying Lin1, Song-Lin Tang1, Fu-Sheng Chang1, Zhi-Xian Li1, Wei-Chang Ray1, Han-Chen Tseng1, Chun-Chieh Wang1, Ming-Han Liao4, Chee-Wee Liu2, Min-Hung Lee1 (1. Inst. and Undergraduate Program of Electro-Optical Eng. , National Taiwan Normal Univ. (Taiwan), 2. Graduate School of Advance Tech. , National Taiwan Univ. (Taiwan), 3. Inst. of Electronics, National Yang Ming Chiao Tung Univ. (Taiwan), 4. Department of mechanical engineering, National Taiwan Univ. (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-3-05

Novel wake-up procedure is proposed by nanosecond laser annealing (NLA), and the outstanding delta 2Pr and low temperature process (lower than 400oC for underneath layer) are demonstrated. The general wake-up by E-field cycling makes mass production difficult due to individual device step by step. The proposed method is feasible for BEOL compatible and high throughput FeRAM.

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