2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-4] Emerging Memory Devices

2022年9月28日(水) 09:00 〜 10:15 201 (2F)

Session Chair: Xu Bai (NanoBridge Semiconductor, Inc.), Atsushi Himeno (Panasonic Corporation)

09:15 〜 09:30

[F-4-02] Read Non-Destructive Dynamic Flash Memory (DFM) with Dual and Double Gates

〇Koji Sakui1, Nozomu Harada1 (1. Unisantis Electronics Singapore Pte Ltd. (Singapore))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-4-02

This paper proposes read non-destructive Dynamic Flash Memory (DFM). Similar to DRAM, refresh is required, but fast block refresh can improve the duty ratio. Analogous to Flash, “0” Erase, “1” Program, and Read are necessary, but the holes can be regenerated while read for realizing the read non-destructive DFM.

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