2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-4] Emerging Memory Devices

Wed. Sep 28, 2022 9:00 AM - 10:15 AM 201 (2F)

Session Chair: Xu Bai (NanoBridge Semiconductor, Inc.), Atsushi Himeno (Panasonic Corporation)

9:45 AM - 10:00 AM

[F-4-04] NAND Memory Composed of Crystalline In-Ga-Zn Oxide FETs with Endurance of over 1013 Cycles at 20-ns Write Time without Batch Erase

〇Shoki Miyata1, Satoru Oshita1, Hitoshi Kunitake1, Yuki Okamoto1, Hiroki Inoue1, Hiromi Sawai1, Kunihiro Fukushima1, Yusuke Komura1, Takanori Matsuzaki1, Yoshiyuki Kurokawa1, Tatsuya Onuki1, Hajime Kimura1, Shinya Sasagawa1, Shunpei Yamazaki1 (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-4-04

Development of emerging memories for artificial intelligence is accelerating. Memory with In-Ga-Zn oxide FETs has an advantage of being monolithically stackable on Si CMOS, but the memory access needs to be improved. We propose NAND memory composed of crystalline oxide semiconductor (which we call "OS NAND"). Operation of OS NAND is different in principle from that of NAND flash memory or emerging nonvolatile memories; charge is written through a semiconductor layer in OS NAND. Our OS NAND has outstanding performance, such as endurance of over 10^13 cycles and write time of 20 ns.

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