[F-4] Emerging Memory Devices

[F-4-04] NAND Memory Composed of Crystalline In-Ga-Zn Oxide FETs with Endurance of over 10¹³ Cycles at 20-ns Write Time without Batch Erase

〇Shoki Miyata¹, Satoru Oshita¹, Hitoshi Kunitake¹, Yuki Okamoto¹, Hiroki Inoue¹, Hiromi Sawai¹, Kunihiro Fukushima¹, Yusuke Komura¹, Takanori Matsuzaki¹, Yoshiyuki Kurokawa¹, Tatsuya Onuki¹, Hajime Kimura¹, Shinya Sasagawa¹, Shunpei Yamazaki¹ (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-4-04

Development of emerging memories for artificial intelligence is accelerating. Memory with In-Ga-Zn oxide FETs has an advantage of being monolithically stackable on Si CMOS, but the memory access needs to be improved. We propose NAND memory composed of crystalline oxide semiconductor (which we call "OS NAND"). Operation of OS NAND is different in principle from that of NAND flash memory or emerging nonvolatile memories; charge is written through a semiconductor layer in OS NAND. Our OS NAND has outstanding performance, such as endurance of over 10^13 cycles and write time of 20 ns.