2022 International Conference on Solid State Devices and Materials

講演情報

印刷

Oral Presentation

Focus Session 2 (Area1&2&8)

[F-9] CMOS and Memory Applications of Low Dimensional Materials I

2022年9月29日(木) 13:30 〜 15:15 201 (2F)

Session Chair: Toshifumi Irisawa (AIST), Hiroshi Naganuma (Tohoku Univ.)

14:45 〜 15:15

[F-9-05 (Invited)] Comparing h-BN and MgO as Tunnel Barriers in scaled Magnetic Tunnel Junctions

〇John Robertson1 (1. Cambridge Univ. (UK))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-9-05

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