2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-10] Advanced CMOS: Device, Process and Material

2022年9月29日(木) 16:00 〜 18:00 301 (3F)

Session Chair: Nobuyuki Mise (Hitachi High-Tech Corp.), Keisuke Yamamoto (Kyushu Univ.)

16:30 〜 16:45

[G-10-02] Impact of Back-side Power Delivery Network Layout on the FinFET Device Performance

Goutham Arutchelvan1, Thomas Chiarella1, Hiroaki Arimura1, Anabela Veloso1, Anne Jourdain1, Eugenio Dentoni Litta1, Naoto Horiguchi1, 〇Jerome Mitard1 (1. imec (Belgium))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-10-02

Backside power delivery (BSPDN) with Buried Power Rail (BPR) is an essential enabler for CMOS scaling beyond the 5nm node. In this work, we show that integrating BPR and Nano-Through Silicon Via (n-TSV) close to the active channel does not degrade the device performance, thus, confirming that the stress transfer from BSPDN elements is rather weak. Design guidelines with respect to n-TSV proximity and number of VBPR vias for optimized device performance and reduced footprint is discussed.

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