Impacts of Annealing Temperature and Atmosphere on (111) and (100) n-Ge MOS Interface Properties with Plasma Oxidation GeOx and ALD Al2O3

Xueyang Han

doi:https://doi.org/10.7567/SSDM.2022.G-10-04

講演情報

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-10] Advanced CMOS: Device, Process and Material

2022年9月29日(木) 16:00 〜 18:00 301 (3F)

Session Chair: Nobuyuki Mise (Hitachi High-Tech Corp.), Keisuke Yamamoto (Kyushu Univ.)

17:00 〜 17:15

[G-10-04] Impacts of Annealing Temperature and Atmosphere on (111) and (100) n-Ge MOS Interface Properties with Plasma Oxidation GeO_x and ALD Al₂O₃

〇Xueyang Han¹, Chia-Tsong Chen¹, Mengnan Ke², Ziqiang Zhao¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan), 2. Chiba Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-10-04

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講演情報

[G-10] Advanced CMOS: Device, Process and Material

[G-10-04] Impacts of Annealing Temperature and Atmosphere on (111) and (100) n-Ge MOS Interface Properties with Plasma Oxidation GeOx and ALD Al2O3

パスワード

[G-10-04] Impacts of Annealing Temperature and Atmosphere on (111) and (100) n-Ge MOS Interface Properties with Plasma Oxidation GeO_x and ALD Al₂O₃