[G-5] Image Sensor Technology

[G-5-02] Quantitative Analysis of Petal Flare depending on Pixel Size in CMOS Image Sensors

〇SANGIN BAE¹, Jinmyoung Mok¹, Jeongmin Bae¹, Hyung-Keun Gweon¹, Yunki Lee¹, Younggyu Jeong¹, Bumsuk Kim¹, Jungchak Ahn¹ (1. Samsung Electronics Corp., Ltd. (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-5-02

A petal flare that are determined by a periodic struc-ture of CMOS image sensor produces repetitive virtual images in specific direction and severely affects image quality. Since theoretical modeling for the cause of petal flare is still insufficient, it is difficult to quantitatively compare different petal flares from different types of CMOS image sensors. In this paper, we introduce an ana-lytical flare model by coupling pixel-level wave optic simulation and module-level ray optic simulation, and suggest a novel evaluation method to quantitatively measure the flare level. A flare index (F.I.) defined from the intensity profile of flare image clearly shows that the pixel size mainly affects the flare pattern as well as dif-fraction efficiency. The novel quantitative analysis and evaluation of petal flare will contribute to overcoming physical obstacles towards sub-micron CMOS image sensor.