2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-5] Image Sensor Technology

2022年9月28日(水) 10:45 〜 12:15 301 (3F)

Session Chair: Takashi Matsukawa (AIST), Hidetoshi Oishi (Sony Semiconductor Solutions Corp.)

11:30 〜 11:45

[G-5-03] Influence of Neutron Irradiation on CMOS Image Sensors

〇Gyeong Jin Lee1, Hyungchae Kim1, Junghyun Kim1, Myeongeon Kim1, Seunghan Hong1, Jonghoon Park1, Yunki Lee1, Bumsuk Kim1, JungChak Ahn1 (1. Samsung Electronics Co., Ltd. (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-5-03

In this article, we investigated the influence of neutron irradiation in the perspective of white spot (WS) creation. By irradiating neutron on CMOS image sensors (CISs), it was found that the number of WS creation was directly governed by exposure time and the distance from neutron source. By shielding the neutron flux, we further con-firmed both high energy and thermal neutrons made WS. In addition, we calculated activation energy of the defects and concluded that the defects were formed in silicon bulk by displacement damage of neutrons.

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