[G-5] Image Sensor Technology

[G-5-03] Influence of Neutron Irradiation on CMOS Image Sensors

〇Gyeong Jin Lee¹, Hyungchae Kim¹, Junghyun Kim¹, Myeongeon Kim¹, Seunghan Hong¹, Jonghoon Park¹, Yunki Lee¹, Bumsuk Kim¹, JungChak Ahn¹ (1. Samsung Electronics Co., Ltd. (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-5-03

In this article, we investigated the influence of neutron irradiation in the perspective of white spot (WS) creation. By irradiating neutron on CMOS image sensors (CISs), it was found that the number of WS creation was directly governed by exposure time and the distance from neutron source. By shielding the neutron flux, we further con-firmed both high energy and thermal neutrons made WS. In addition, we calculated activation energy of the defects and concluded that the defects were formed in silicon bulk by displacement damage of neutrons.