[G-6] Ferroelectric Devices

[G-6-05] Impact of Polarization States Changing on Effective Carrier Mobility of HfZrOx Ferroelectric Field-Effect Transistor

〇Fenning Liu¹, Yue Peng^1,2, Genquan Han^1,2,3, Yan Liu^1,2, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics Xidian Univ. (China), 2. Zhejiang Lab. (China), 3. Hangzhou Institute of Technology, Xidian University (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-6-05

The impact of polarization states changing on effective carrier mobility (μeff) of HfZrOx (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated. The μeff of the HZO FeFET decreases with the increase of erase pulses, while increases with the write pulses. The results show that the μeff of the HZO FeFET at different polarization states is smaller than that in the initial state, which was caused by the positive charges (e.g. oxygen vacancies V_O^(2+)) detrapping/trapping.