[G-6] Ferroelectric Devices

[G-6-06] ZrO₂/Si Gate Stack for Antiferroelectric MFIS Capacitors and Antiferroelectric Si n-FETs

〇Xuan Luo¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-6-06

We investigate the properties of antiferroelectric (AFE) ZrO2 ultrathin films on Si in MFIS capacitors and AFE FETs. ZrO2 directly deposited on Si with Si chemical oxides shows a low interface trap density and exhibits AFE characteristics with double hysteresis loops. An n-channel FET with the AFE ZrO2 gate insulator shows polarization switching in P-V characteristics and ferroelectric hysteresis in Id-Vg characteristics under unipolar voltage operation.