[G-7] Advanced CMOS: Device Technology

[G-7-03] Atomic-Layer Deposited Tantalum-based Metal Gates (TaN, TaAlC, TaAlN, TaCoN) for Multiple VTH Modulation

〇Moounsuk Choi¹, Boncheol Ku¹, Yu-Rim Jeon¹, Chulwon Chung¹, Changhwan Choi¹ (1. Hanyang university (Korea))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-7-03

We demonstrated threshold voltage (VTH) modulation by various ALD TaN-based metals gates of TaN, TaAlC, TaAlN, and TaCoN. To achieve tunability of VTH, we in-cluded thickness modulation, binary or ternary metal doping, and dipole formation. By changing process pa-rameters of metal precursors, ALD process sequence, post heat treatment, dipole capping, we successfully controlled the wide range of VFB (Al¬2O3: 190 mV, La2O3: 460 mV), VTH (0.6~1.38 V) and eWF (4.09 ~ 5.43 eV), which are suitable for advanced logic device applications.