2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-7] Advanced CMOS: Device Technology

Thu. Sep 29, 2022 9:00 AM - 10:15 AM 301 (3F)

Session Chair: Keisuke Yamamoto (Kyushu Univ.), Anabela Veloso (imec)

9:45 AM - 10:00 AM

[G-7-03] Atomic-Layer Deposited Tantalum-based Metal Gates (TaN, TaAlC, TaAlN, TaCoN) for Multiple VTH Modulation

〇Moounsuk Choi1, Boncheol Ku1, Yu-Rim Jeon1, Chulwon Chung1, Changhwan Choi1 (1. Hanyang university (Korea))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-7-03

We demonstrated threshold voltage (VTH) modulation by various ALD TaN-based metals gates of TaN, TaAlC, TaAlN, and TaCoN. To achieve tunability of VTH, we in-cluded thickness modulation, binary or ternary metal doping, and dipole formation. By changing process pa-rameters of metal precursors, ALD process sequence, post heat treatment, dipole capping, we successfully controlled the wide range of VFB (Al¬2O3: 190 mV, La2O3: 460 mV), VTH (0.6~1.38 V) and eWF (4.09 ~ 5.43 eV), which are suitable for advanced logic device applications.

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