[G-8] Ferroelectric Material and Process

[G-8-02] Effects of Hf_xZr_1-xO₂ Ferroelectrics/Ge MFIS Interfaces on Polarization Reversal Behavior

〇Koichiro Iwashige¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-8-02

We report on the effect of interface properties on the polarization reversal behavior in HZO/Ge MFIS capacitors on Ge substrates with low doping concentrations. It is found that, when the interface properties are poor and the Fermi-level pinning occurs, the polarization reversal behavior can be observed even for MFIS capacitors with low doping concentrations at the measurement frequency where the interface states can respond.