[H-4] Device Application I: Low Dimensional Devices and Materials

[H-4-02] In-plane Gate Graphene Transistor with Epitaxially Grown Molybdenum Disulfide Passivation Layers

〇Po-Cheng Tsai¹, Chun-Wei Huang², Che-Jia Chang², Shu-Wei Chang², Shih-Yen Lin² (1. Univ. of Taiwan (Taiwan), 2. Res. of Applied Sciences (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-4-02