[H-8] Device Application III: Low Dimensional Devices and Materials

[H-8-04] Accuracy of Equivalent Model in Band-to-band Tunneling Simulation of Semiconductor Nanowires

〇Jo Okada¹, Nobuya Mori¹, Gennady Mil'nikov¹ (1. Osaka Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-8-04

Accuracy of the equivalent model in the band-to-band tunneling simulation of semiconductor nanowires is investigated by constructing equivalent models for various semiconductor nanowires and calculating the tunneling probability with non-equilibrium Green’s function method. As the transport window is widened, the equivalent model accurately reproduces not only the traveling states but also the evanescent states. The relative error of the tunneling probability is found to decrease exponentially as the transport window width. In addition, the direct-gap semiconductor nanowire case is found to be more accurate than the indirect-gap case.