2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[J-10] DRAM, SRAM, and 3D NAND

Thu. Sep 29, 2022 4:00 PM - 5:45 PM 303 (3F)

Session Chair: Norikatsu Takaura (Hitachi, Ltd.), Soichi Sugiura (Micron Technology Inc.)

5:00 PM - 5:15 PM

[J-10-05] Improvement of Cell Characteristics using Controlling the Current Path in 3D NAND Flash

Daewoong Kang1, 〇Hyojin Park2, Inyoung Lee2, Hyowon Kang3, Hyoungsoo Kim4 (1. Korea National University of Transportation (Korea), 2. Myongji Univ. (Korea), 3. Korea Int'l School (Korea), 4. California State Polytechnics Univ. (United States of America))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-10-05

In Vertical NAND (V-NAND) flash memory, the effect of current path change according to the program state was analyzed. Also, the method to control it was confirmed through simulation. Electrical properties such as S.S and short channel effect were improved by adding a separately doped poly silicon channel under the poly silicon channel.

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