[J-10] DRAM, SRAM, and 3D NAND

[J-10-05] Improvement of Cell Characteristics using Controlling the Current Path in 3D NAND Flash

Daewoong Kang¹, 〇Hyojin Park², Inyoung Lee², Hyowon Kang³, Hyoungsoo Kim⁴ (1. Korea National University of Transportation (Korea), 2. Myongji Univ. (Korea), 3. Korea Int'l School (Korea), 4. California State Polytechnics Univ. (United States of America))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-10-05

In Vertical NAND (V-NAND) flash memory, the effect of current path change according to the program state was analyzed. Also, the method to control it was confirmed through simulation. Electrical properties such as S.S and short channel effect were improved by adding a separately doped poly silicon channel under the poly silicon channel.