2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[J-10] DRAM, SRAM, and 3D NAND

Thu. Sep 29, 2022 4:00 PM - 5:45 PM 303 (3F)

Session Chair: Norikatsu Takaura (Hitachi, Ltd.), Soichi Sugiura (Micron Technology Inc.)

5:15 PM - 5:30 PM

[J-10-06] Analytical Modeling of Intrinsic Threshold Voltage and Subthreshold Slope for 3D NAND Flash Memory with a Gaussian Doping Profile

〇Amit Kumar1, Shubham Sahay1 (1. Indian Inst. of Tech., Kanpur (India))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-10-06

In this work, we formulate an analytical model for the intrinsic threshold voltage and the subthreshold slope of 3D NAND flash cells with uniform threshold voltage distribution across different word line (WL) layers along the string. The results obtained using the analytical model are in close agreement with the TCAD simulations validating the accuracy of the developed model. We also utilize the analytical model to provide insights and necessary design guidelines for further optimizing the performance.

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