[J-10] DRAM, SRAM, and 3D NAND

[J-10-07] Dually Functional Wide Bandgap Oxides Bilayer SiO₂/Al₂O₃ Based Memristor for Nonvolatile Memory and Photo Sensing

〇Dayanand Kumar¹, Lana Joharji¹, Nazek El Atab¹ (1. King Abdullah University of Science and Technology (Saudi Arabia))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-10-07

In this work, we investigate bilayer SiO2/Al2O3-based memristor for nonvolatile memory and photo sensing application. The current opto-electronic ITO/SiO2/Al2O3/Pt device exhibits good photo sensing features in terms of electrical SET and optical RESET endurance of at least 100 cycles for blue light without any disruption. Furthermore, the device shows highly stable retention (104 s) without any degradation and excellent device-to-device uniformity. This work not only enables us to use our device in memory capabilities but also provides a significant advantage for photo sensing.