[J-2] GaN-based High-speed Devices

[J-2-04] Self-terminating Photo-electrochemical (PEC) Etching for Recessed-gate Fabrication on AlGaN/GaN HEMTs

〇Takuya Togashi¹, Kosaku Ito¹, Taketomo Sato¹ (1. Hokkaido Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-2-04

The controllability of photo-electrochemical (PEC) etching was investigated for the fabrication of recessed-gate AlGaN/GaN HEMTs. The self-termination depth of the PEC etching was strongly dependent on the light power intensity, showing that the photovoltaic effect of the electrolyte/AlGaN system is the driving force for PEC etching.