[J-3] High-speed Devices

[J-3-02] Surface-oxide-controlled InGaAs/InAlAs Inverted-type MOS-HEMTs for Sub-THz High-power Amplifiers

〇Shiro Ozaki¹, Yusuke Kumazaki¹, Naoya Okamoto¹, Yasuhiro Nakasha¹, Naoki Hara¹, Toshihiro Ohki¹ (1. Fujitsu Limited (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-3-02

Herein, we successfully improved the maximum oscillation frequency and maximum stable gain (MSG) across a wide bias range using surface-oxide-controlled (SOC) InGaAs/InAlAs inverted-type metal-oxide-semiconductor HEMTs (inverted MOS-HEMTs) due to a reduction in the gate leakage current and drain conductance. H2O vapor treatment selectively decreased the narrow band gap oxide (InOx) at the surface of the In-based epitaxial layer. Consequently, SOC inverted MOS-HEMTs show a high MSG of over 12 dB across a wide bias range at 100 GHz.