[J-3] High-speed Devices

[J-3-03] Single-asymmetric-gated graphene field-effect transistor for terahertz applications

〇Chao Tang¹, Koichi Tamura¹, Akira Satou¹, Victor Ryzhii¹, Taiichi Otsuji¹ (1. Tohoku Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-3-03

A novel device structure of the single-asymmetric-gated graphene field-effect transistor (GFET) has been proposed and theoretically investigated using both the equivalent lumped circuit and the distributed waveguide models. In this structure, the ballistic electrons (BE) are injected from the source electrode, traveling through the ungated intrinsic region (i-region), then interact with electrons in the gated n-doped region (n-region) via the Coulomb drag effect, which generates the dragged quasi-equilibrated electrons (DQE), and quasi-equilibrated electrons (QE) reversely injected from the drain electrode when the drain is biased to arise a negative potential slope between the gate and drain. The aforementioned process leads to the current-voltage properties of the negative differential conductivity. One can regulate the frequency, where a negative impedance emerges, by designing the parameter of GFET in the terahertz (THz) range.