[J-3] High-speed Devices

[J-3-04] Successful operation of large-area resonant tunneling diodes without heat destruction by introducing a heat-dissipation InP conduction layer

〇Hiroki Tanaka¹, Hidenari Fujikata¹, Feifan Han¹, Akira Ishikawa¹, Safumi Suzuki¹, Masahiro Asada¹ (1. Tokyo Institute of Technology (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-3-04

This study proposed a new resonant-tunneling-diode (RTD) structure with improving heat dissipation. In the proposed structure, the low-thermal conductive n+-InGaAs layer, which disturbed heat dissipation to the substrate, was replaced by a high-thermal conductive n+-InP layer. We measured the current-voltage characteristics of various RTD mesa areas, and investigated the number of RTD mesa without heat destruction under the IV measurement. We found that operations without heat destruction were obtained up to twice the larger area or consumed power from the previous structure.