[J-3] High-speed Devices

[J-3-05] Superlattice resonant tunneling diode epitaxial structure for THz applications

〇Michele Cito¹, Brett A. Harrison², Toshikazu Mukai³, Richard A. Hogg¹ (1. University of Glasgow (UK), 2. University of Sheffield (UK), 3. RohmCo. Ltd (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-3-05

A novel superlattice (SL) design is proposed to improve the crystal quality in AlAs/InGaAs/InP resonant tunnelling diode (RTD) epitaxial structure. The ternary InGaAs well is substituted with binary InAs and GaAs layers in a periodic structure growth by MBE. The SL structure is compared with a standard equivalent ternary structure grown by MBE and one grown by MOVPE. Characterization by photoluminescence (PL) highlighted improvements in crystal uniformity