[J-5] SiC Processes and Characterizations

[J-5-01] Structural Analysis of Bar-Shaped Single Shockley-Type Stacking Fault near the Substrate/Epilayer Interface and the Epitaxial Surface of 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Corporate R&D Center, Toshiba Corp. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-5-01

Partial dislocation combinations near the substrate/epilayer interface and the epilayer surface of 4H-SiC are analyzed for bar-shaped single Shockley-type stacking faults (1SSFs). Although the partial dislocations are found to have a zigzag structure similar to that found in triangular 1SSF, the combination is thought to be different. The features of the original basal plane dislocation are speculated on.