[J-5] SiC Processes and Characterizations

[J-5-02] Influence of surface steps on the contraction of 4H-SiC basal plane dislocations

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1. Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-5-02

We investigated the dependence of the activation energy of the contraction of the BPD partial disloca-tions on the height of the surface step. We found that the steps could prevent the contraction of BPD partial dislocations in the case of the pair of Burgers vectors is open toward the step.