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[J-5-03] Auger recombination coefficient in 4H-SiC under the high injection condition
Presentation style: Online
https://doi.org/10.7567/SSDM.2022.J-5-03
We observed carrier recombination in 4H-SiC under the high injection condition by time resolved free carrier absorption measurements. Based on the observed decay curves, we estimated the Auger recombination coefficient. As a result, we found dependence of the Auger recombination coefficient on the excited carrier density.
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