[J-5] SiC Processes and Characterizations

[J-5-03] Auger recombination coefficient in 4H-SiC under the high injection condition

〇Kazuhiro "-" TANAKA¹, Keisuke NAGAYA¹, Masashi KATO¹ (1. Nagoya Institute Technology (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-5-03

We observed carrier recombination in 4H-SiC under the high injection condition by time resolved free carrier absorption measurements. Based on the observed decay curves, we estimated the Auger recombination coefficient. As a result, we found dependence of the Auger recombination coefficient on the excited carrier density.