[J-5] SiC Processes and Characterizations

[J-5-04] Development of a Real-Time Temperature Measurement Technique for SiC Wafer During Ultra-Rapid Thermal Annealing Based on Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹, Kotaro Matsuguchi¹, Takuma Sato¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1. Hiroshima Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-5-04

Heat diffusion of SiC wafer in planar and depth direction during atmospheric pressure thermal plasma jet performed ultra-rapid thermal annealing (URTA) has been visualized by an optical-interference contactless thermometry (OICT) imaging technique. A software program has been developed on the basis of image preprocessing and database to extract 3.5-dimensional (D) (x, y, z, and time) temperature distributions from observations in reflectance. The combination of OICT imaging and this software program achieves to obtain a 3.5-D temperature distribution in 3 seconds and demonstrated that it has potential real-time temperature measurement technique on URTA systems.