2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-5] SiC Processes and Characterizations

Wed. Sep 28, 2022 10:45 AM - 12:00 PM 303 (3F)

Session Chair: Kung-Yen Lee (National Taiwan Univ.), Naoki Watanabe (Hitachi, Ltd.)

11:30 AM - 11:45 AM

[J-5-04] Development of a Real-Time Temperature Measurement Technique for SiC Wafer During Ultra-Rapid Thermal Annealing Based on Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu1, Kotaro Matsuguchi1, Takuma Sato1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1. Hiroshima Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-5-04

Heat diffusion of SiC wafer in planar and depth direction during atmospheric pressure thermal plasma jet performed ultra-rapid thermal annealing (URTA) has been visualized by an optical-interference contactless thermometry (OICT) imaging technique. A software program has been developed on the basis of image preprocessing and database to extract 3.5-dimensional (D) (x, y, z, and time) temperature distributions from observations in reflectance. The combination of OICT imaging and this software program achieves to obtain a 3.5-D temperature distribution in 3 seconds and demonstrated that it has potential real-time temperature measurement technique on URTA systems.

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