2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

04: Power / High-speed Devices and Materials

[J-6] Interface Technologies

2022年9月28日(水) 13:30 〜 15:45 303 (3F)

Session Chair: Yuichi Onozawa (Fuji Electric Corp.), Shinsuke Harada (AIST)

13:45 〜 14:00

[J-6-02] Suppression of GaOx interlayer growth towards stable SiO2/GaN MOS devices

〇Kentaro Onishi1, Takuma Kobayashi1, Hidetoshi Mizobata1, Mikito Nozaki1, Akitaka Yoshigoe2, Takayoshi Shimura1, Heiji Watanabe1 (1. Osaka Univ. (Japan), 2. JAEA (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-6-02

Although a growth of GaOx interlayer at the SiO2/GaN interface improves the MOS interface properties, a recent study suggested that the GaOx interlayer is easily reduced during the annealing process, inducing positive fixed charge at the interface. In the present study, we formed SiO2 by sputter deposition to minimize the growth of unstable GaOx interlayer. With post-deposition annealing (PDA) at 800°C, SiO2/GaN MOS structure with a small C-V hysteresis was obtained. Furthermore, the negative shift of VFB during the annealing was suppressed, thanks to the minimization of GaOx interlayer formaiton.

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