[J-6] Interface Technologies

[J-6-04] High Quality Al₂O₃/SiC Gate Stack Fabricated by Microwave Plasma Annealing

〇Nannan You^1,2, Xinyu Liu^1,2, Qian Zhang^1,2, Jiayi Wang¹, Yang Xu¹, Yu Wang^1,2, Shengkai Wang^1,2 (1. Inst. of Beijing (China), 2. Univ. of Beijing (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-6-04

The post deposition microwave plasma annealing (MPA) is developed to obtain high quality Al2O3/SiC gate stacks. By optimizing the plasma power, the in-terface state density is reduced by 1 order of magni-tude to 6 × 1011 cm-2eV-1, the breakdown electric field is increased, and the voltage shift is effectively sup-pressed. XPS results show the oxygen plasma enters the Al2O3 dielectric and fills the incomplete lattice during the MPA process, meanwhile, the interface has not been further oxidized.