[J-6] Interface Technologies

[J-6-06] 4H-SiC surface nitridation kinetic model in high temperature N₂ (+O₂) annealing focusing on the effects of annealing temperature and O₂ partial pressure

〇Tianlin Yang¹, Koji Kita^1,2 (1. Department of Materials Engineering, School of Engineering, Univ. of Tokyo (Japan), 2. Department of Advanced Materials Science, Graduate School of Frontier Sciences, Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-6-06

An SiC surface nitridation kinetic model was build up
considering the reaction rates of N-incorporation (Nr) and N-removal (k). According to our model, the saturated surface N density (AN) is determined by the ratio Nr/k. Based on this model, the effects of the annealing temperature (T) and O2 partial pressure on the saturated AN for 4H-SiC(0001) were investigated for high-T N2 annealing systematically. Experimentally, the saturated AN was observed to increase with T but decrease with the O2 partial pressure, which is understandable by considering our model.