Improvement of SiO<sub>2</sub>/4H-SiC MOS Interface Characteristics via a Concentration-Tunable Boron Incorporation Process

Presentation information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-6] Interface Technologies

Wed. Sep 28, 2022 1:30 PM - 3:45 PM 303 (3F)

Session Chair: Yuichi Onozawa (Fuji Electric Corp.), Shinsuke Harada (AIST)

3:15 PM - 3:30 PM

〇Runze Wang¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1. The Univ. of Tokyo (Japan), 2. Mitsubishi Electric Corp. (Japan))

Presentation style: On-site (in-person)

Abstract password authentication.
Password to download abstracts has been informed in the confirmation mail.