Theoretical Study of the Influence of GaO<sub>x</sub> Layer on the SiO<sub>2</sub>/GaN Interface

Shuto Hattori

doi:https://doi.org/10.7567/SSDM.2022.J-6-09

3:30 PM - 3:45 PM

[J-6-09 (Late News)] Theoretical Study of the Influence of GaO_x Layer on the SiO₂/GaN Interface

〇Shuto Hattori¹, Atsushi Oshiyama², Seiichi Miyazaki¹, Heiji Watanabe³, Katsunori Ueno⁴, Ryo Tanaka⁴, Tsurugi Kondo⁴, Shinya Takashima⁴, Masaharu Edo⁴, Kenji Shiraishi^2,1 (1. Graduate School of Eng., Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan), 3. Graduate School of Eng., Osaka Univ. (Japan), 4. Fuji Electric Co., Ltd. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-6-09

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[J-6] Interface Technologies

[J-6-09 (Late News)] Theoretical Study of the Influence of GaO_x Layer on the SiO₂/GaN Interface

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Presentation information

[J-6] Interface Technologies

[J-6-09 (Late News)] Theoretical Study of the Influence of GaOx Layer on the SiO2/GaN Interface

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[J-6-09 (Late News)] Theoretical Study of the Influence of GaO_x Layer on the SiO₂/GaN Interface