2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-6] Interface Technologies

Wed. Sep 28, 2022 1:30 PM - 3:45 PM 303 (3F)

Session Chair: Yuichi Onozawa (Fuji Electric Corp.), Shinsuke Harada (AIST)

3:30 PM - 3:45 PM

[J-6-09 (Late News)] Theoretical Study of the Influence of GaOx Layer on the SiO2/GaN Interface

〇Shuto Hattori1, Atsushi Oshiyama2, Seiichi Miyazaki1, Heiji Watanabe3, Katsunori Ueno4, Ryo Tanaka4, Tsurugi Kondo4, Shinya Takashima4, Masaharu Edo4, Kenji Shiraishi2,1 (1. Graduate School of Eng., Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan), 3. Graduate School of Eng., Osaka Univ. (Japan), 4. Fuji Electric Co., Ltd. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-6-09

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