2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-8] Si and SiC Power Devices

Thu. Sep 29, 2022 10:45 AM - 12:00 PM 303 (3F)

Session Chair: Tetsuya Nitta (Mitsubishi Electric Corp.), Tomoaki Hatayama (Sumitomo Electric Industries, Ltd.)

11:30 AM - 11:45 AM

[J-8-03] Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals

〇Yudai Kitamura1, Takeshi Tawara2, Shinsuke Harada2, Hiroshi Yano1, Noriyuki Iwamuro1 (1. Univ. of Tsukuba (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-8-03

This study investigates, for the first time, the surge current capabilities of embedded Schottky Barrier Diodes (SBDs) in a 1.2-kV SiC SBD-integrated trench MOSFET (SWITCH-MOS) with Ti and Ni, as Schottky metals, and demonstrates sufficiently high SBD surge current capabilities when a higher Schottky barrier height of Ni was used.

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